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| Ordering number : ENA0543 2SA2204 SANYO Semiconductors DATA SHEET 2SA2204 Applications * PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications DC / DC converter, Relay drivers, lamp drivers, motor drivers. Features * * * * * Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25C Conditions Ratings --80 --80 --80 --7 --2.5 --4 --500 0.8 15 150 --55 to +150 Unit V V V V A A mA W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=-70V, IE=0A VEB=-4V, IC=0A VCE=-5V, IC=--100mA VCE=-10V, IC=--500mA VCB=-10V, f=1MHz Ratings min typ max --1 --1 200 350 23 400 MHz pF Unit A A Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0806EA SY IM TC-00000307 No. A0543-1/4 2SA2204 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=--1A, IB=--100mA IC=--1A, IB=--100mA IC=--10A, IE=0A IC=--100A, RBE=0 IC=--1mA, RBE= IE=--10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --80 --80 --80 --7 40 500 28 Ratings min typ --100 --0.85 max --200 --1.2 Unit mV V V V V V ns ns ns Package Dimensions unit : mm (typ) 7518-003 6.5 5.0 2.3 1.5 Package Dimensions unit : mm (typ) 7003-003 6.5 5.0 2.3 1.5 0.5 0.5 4 4 7.0 5.5 5.5 7.0 0.8 1.6 7.5 1 0.5 0.6 2 0.8 1.2 3 0 to 0.2 1.2 0.6 2.5 0.85 0.7 0.85 0.5 1.2 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 Switching Time Test Circuit IB1 OUTPUT IB2 VR 1k PW=20s D.C.1% INPUT 50 RL + 470F VCC= --40V + 220F VBE=5V IC= --10IB1=10IB2= --0.5A No. A0543-2/4 2SA2204 --2.0 IC -- VCE --20 0mA --180m A --2.5 IC -- VBE VCE= --5V --1.8 0 --12 mA 140 mA A --100m --80mA Collector Current, IC -- A --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 ---16 0 --40mA mA Collector Current, IC -- A --1.6 --60mA --2.0 --1.5 --20mA --1.0 Ta=7 5C --0.2 --0.4 --0.6 --0.5 IB=0mA --0.05 --0.10 --0.15 --0.20 --0.25 --0.30 --0.35 --0.40 --0.45 --0.50 0 0 --25C --0.8 --5mA 25C --1.0 --1.2 IT11655 Collector-to-Emitter Voltage, VCE -- V 1000 IT11654 7 hFE -- IC Base-to-Emitter Voltage, VBE -- V fT -- IC VCE= --5V 7 Gain-Bandwidth Product, fT -- MHz 5 VCE= --10V DC Current Gain, hFE 5 3 2 Ta=75C 3 25C --25C 100 7 5 2 100 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A 100 IT11656 5 Collector Current, IC -- A IT11657 Cob -- VCB f=1MHz VCE(sat) -- IC IC / IB=10 Output Capacitance, Cob -- pF 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 5 --0.1 7 5 3 2 3 2 7 Ta= 2 2 3 5 5C --0.01 10 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT11658 7 --0.01 --25 5C 7 --0.1 C 2 3 5 7 --1.0 2 3 5 Collector-to-Base Voltage, VCB -- V 2 VBE(sat) -- IC Collector Current, IC -- A 7 5 3 2 IT11659 ASO IC / IB=10 ICP= --4A IC= --2.5A 10 0m s <10s Base-to-Emitter Saturation Voltage, VBE(sat) -- V 1m 100 s s Collector Current, IC -- A --1.0 Ta= --25C --1.0 7 5 3 2 --0.1 7 5 3 2 10 m s o DC 500 7 s 75C 5 per 25C atio n 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 --0.01 --0.1 Tc=25C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT11661 Collector Current, IC -- A IT11660 Collector-to-Emitter Voltage, VCE -- V No. A0543-3/4 2SA2204 7 5 3 2 ASO ICP= --4A IC= --2.5A <10s s 100 0.9 0.8 PC -- Ta Collector Current, IC -- A 0m --1.0 7 5 3 2 --0.1 7 5 3 2 s 1m Collector Dissipation, PC -- W 10 s s 500 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 DC 10 op er ati m s on --0.01 --0.1 Ta=25C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT11662 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -- V 17.5 Ambient Temperature, Ta -- C IT11652 PC -- Tc 15.0 Collector Dissipation, PC -- W 12.5 10.0 7.5 5.0 2.5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- C IT11653 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No. A0543-4/4 |
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